Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the [roperties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.
Table of Contents
Lead Chalcogenides: Basic Physical Features, Y. Ravich · Phase Diagrams and Growth of Bulk Lead Chalcogenide Crystals, V. Zlomanov and L. Yashina · Molecular Beam Epitaxy of IV-VI Heterostructures and Superlattices,G. Springholz · Optical Properties and Low Dimensional Systems of IV-VI Semiconductors, H. Pascher and G. Bauer · Lead Telluride n-I-p-I Structures: An Electronic System in the Intermediate Regime Between Two and Three Dimensions, J. Oswald · Semimagnetic Semiconductors Based on Lead Chalcogenides, T. Story · Doped Lead Chalcogenides, L. Ryabova and B. Akimov · Band Structure and Impurity States in the Lead Chalcogenides, B. Volkov · Laser Application of IV-VI Semiconductors, A. Ishida and H. Fujiyasu · The Application of Lead Chalcogenides in Thermoelectric Devices, Z. Dashevsky · Lead Chalcogenide Infrared Detectors Grown on Silicon Substrates, H. Zogg · Infrared Photodetectors Based on Doped Lead Tellurides, D. Khokhlov