Defects in Microelectronic Materials and Devices
Purchasing Options
Features
- Focuses on silicon-based microelectronics
- Features contributions from leading researchers in the field
- Identifies a number of defects, offering diagnosis tools and solutions
- Tabulates and discusses an extensive array of experimental data and theoretical calculations
- Provides a database and concise synopses of more than 450 extensively cited articles that have had a major impact on the field
Summary
Uncover the Defects that Compromise Performance and Reliability
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.
A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:
- Vacancies, interstitials, and impurities (especially hydrogen)
- Negative bias temperature instabilities
- Defects in ultrathin oxides (SiO2 and silicon oxynitride)
Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging materials, such as high-K gate dielectrics and high-mobility substrates being developed to replace Si02 as the preferred gate dielectric material, and high-mobility substrates.
Table of Contents
Defects in Ultra-Shallow Junctions, M. E. Law, R. Camillo-Castillo, L. Robertson, and K. S. Jones
Hydrogen-Related Defects in Silicon, Germanium, and Silicon–Germanium Alloys, A.R. Peaker, V.P. Markevich, and L. Dobaczewski
Defects in Strained-Si MOSFETs, Y. Sun and S. E. Thompson
The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface Roughness, M.V. Fischetti and S. Jin
Electrical Characterization of Defects in Gate Dielectrics, D. K. Schroder
Dominating Defects in the MOS System: Pb and E0 Centers, P. M. Lenahan
Oxide Traps, Border Traps, and Interface Traps in SiO2, D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf
From 3D Imaging of Atoms to Macroscopic Device Properties, S. J. Pennycook, M. F. Chisholm, K. van Benthem, A. G. Marinopoulos, and S. T. Pantelides
Defect Energy Levels in HfO2 and Related High-K Gate Oxides, J. Robertson, K. Xiong, and K. Tse
Spectroscopic Studies of Electrically Active Defects in High-K Gate Dielectrics, G. Lucovsky
Defects in CMOS Gate Dielectrics, E. Garfunkel, J. Gavartin, and G. Bersuker
Negative Bias Temperature Instabilities in High-k Gate Dielectrics, M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, and M. M. Heyns
Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen, L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides
Toward Engineering Modeling of Negative Bias Temperature Instability, T. Grasser, W. Goes, and B. Kaczer
Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides, J. S. Suehle
Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics, J. Suñé and E. Y. Wu
Defects in Thin and Ultrathin Silicon Dioxides, G. Cellere, S. Gerardin, and A. Paccagnella
Structural Defects in SiO2–Si Caused by Ion Bombardment,
A. D. Touboul, A. Carvalho, M. Marinoni, F. Saigne, J. Bonnet, and J. Gasiot
Impact of Radiation-Induced Defects on Bipolar Device Operation, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, L. Tsetseris, and S. T. Pantelides
Silicon Dioxide–Silicon Carbide Interfaces: Current Status and Recent Advances, S. Dhar, S. T. Pantelides, J. R. Williams, and L. C. Feldman
Defects in SiC, E. Janzén, A. Gali, A. Henry, I. G. Ivanov, B. Magnusson, and N. T. Son
Defects in Gallium Arsenide, J. C. Bourgoin and H. J. von Bardeleben
Appendix: Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices
Related Titles
