1st Edition

Physical Models for Quantum Dots

Edited By Jean-Pierre Leburton Copyright 2022
    988 Pages 55 Color & 308 B/W Illustrations
    by Jenny Stanford Publishing

    988 Pages 55 Color & 308 B/W Illustrations
    by Jenny Stanford Publishing

    Since the early 1990s, quantum dots have become an integral part of research in solid state physics for their fundamental properties that mimic the behavior of atoms and molecules on a larger scale. They also have a broad range of applications in engineering and medicines for their ability to tune their electronic properties to achieve specific functions. This book is a compilation of articles that span 20 years of research on comprehensive physical models developed by their authors to understand the detailed properties of these quantum objects and to tailor them for specific applications. Far from being exhaustive, this book focuses on topics of interest for solid state physicists, materials scientists, engineers, and general readers, such as quantum dots and nanocrystals for single-electron charging with applications in memory devices, quantum dots for electron-spin manipulation with applications in quantum information processing, and finally self-assembled quantum dots for applications in nanophotonics.

    Part 1: Electrostatic Quantum Dots: Planar Technology
    1. Self-Consistent Analysis of Single Electron Charging Effects in Quantum Dot Nanostructures
    Dejan Jovanovic and Jean-Pierre Leburton
    2. Disorder-Induced Resonant Tunneling in Planar Quantum Dot Nanostructures
    D. Jovanovic, J.-P. Leburton, H. Chang, R. Grundbacher, and I. Adesida
    3. Three-Dimensional Self-Consistent Simulation of Interface and Dopant Disorders in Delta-Doped Grid-Gate Quantum Dot Devices
    V. Y. Thean, S. Nagaraja, and J.-P. Leburton
    4. Shell-Filling Effects and Coulomb Degeneracy in Planar Quantum Dot Structures
    Satyadev Nagaraja, Philippe Matagne, Voon-Yew Thean, Jean-Pierre Leburton, Yong-Hoon Kim, and Richard M. Martin
    5. Shell Filling of Artificial Atoms Within the Density Functional Theory
    In-Ho Lee, Vivek Rao, Richard M. Martin, and Jean-Pierre Leburton
    6. Electronic Properties and Spin Polarization in Coupled Quantum Dots
    Satyadev Nagaraja, Jean-Pierre Leburton, and Richard M. Martin
    7. Capacitive Energy of Quantum Dots with Hydrogenic Impurity
    In-Ho Lee, Kang-Hun Ahn, Yong-Hoon Kim, Richard M. Martin, and Jean-Pierre Leburton
    8. Electron–Electron Interactions Between Orbital Pairs in Quantum Dots
    S. Nagaraja, L. R. C. Fonseca, and J.-P. Leburton
    9. 2D Limit of Exchange–Correlation Density Energy Functional Approximation
    Yong-Hoon Kim, In-Ho Lee, Satyadev Nagaraja, Jean-Pierre Leburton, Randolph Q. Hood, and Richard M. Martin
    10. Single-Electron Charging and Detection in a Laterally Coupled Quantum Dot Circuit in the Few-Electron Regime
    L.-X. Zhang, P. Matagne, J.-P. Leburton, R. Hanson, and L. P. Kouwenhoven
    11. Engineering the Quantum Point Contact Response to Single-Electron Charging in a Few-Electron Quantum Dot Circuit
    L.-X. Zhang, J.-P. Leburton, R. Hanson, and L. P. Kouwenhoven
    12. Electrostatic Cross-Talk Between Quantum Dot and Quantum Point Contact Charge Read-Out in Few-Electron Quantum Dot Circuits
    L.-X. Zhang and J.-P. Leburton
    13. Dimensionality Effects in the Two-Electron System in Circular and Elliptic Quantum Dots
    Dmitriy V. Melnikov and Jean-Pierre Leburton
    14. Single-Particle State Mixing in Two-Electron Coupled Quantum Dots
    Dmitriy V. Melnikov and Jean-Pierre Leburton
    15. Exchange Interaction and Stability Diagram of Coupled Quantum Dots in Magnetic Fields
    L.-X. Zhang, D. V. Melnikov, and J.-P. Leburton
    16. Coulomb Localization and Exchange Modulation in Two-Electron Coupled Quantum Dots
    Dmitriy V. Melnikov, Jean-Pierre Leburton, Ahmed Taha, and Nahil Sobh
    17. Single-Particle State Mixing and Coulomb Localization in Two-Electron Realistic Coupled Quantum Dots
    Dmitriy V. Melnikov and Jean-Pierre Leburton
    18. Von Neumann–Wigner Theorem in Quantum Dot Molecules
    L.-X. Zhang, D. V. Melnikov, and J.-P. Leburton
    19. Non-monotonic Variation of the Exchange Energy in Double Elliptic Quantum Dots
    L.-X. Zhang, D. V. Melnikov, and J.-P. Leburton
    Part 2: Electrostatic Quantum Dots: Vertical Technology
    20. Modeling of the Electronic Properties of Vertical Quantum Dots by the Finite Element Method
    Philippe Matagne, Jean-Pierre Leburton, Jacques Destine, and Guy Cantraine
    21. Addition Energy Spectrum of a Quantum Dot Disk up to the Third Shell
    D. G. Austing, Y. Tokura, S. Tarucha, P. Matagne, and J.-P. Leburton
    22. Shell Charging and Spin Filling Sequences in Realistic Vertical Quantum Dots
    P. Matagne, J.-P. Leburton, D. G. Austing, and S. Tarucha
    23. Three-Dimensional Analysis of the Electronic Structure of Cylindrical Vertical Quantum Dots
    Philippe Matagne and Jean-Pierre Leburton
    24. Hybrid Lsd a/Diffusion Quantum Monte Carlo Method for Spin Sequences in Vertical Quantum Dots
    P. Matagne, T. Wilkens, T. Wilkens, J.-P. Leburton, and R. Martin
    25. Self-Consistent Simulations of a Four Gated Vertical Quantum Dot
    Philippe Matagne and Jean-Pierre Leburton
    26. Three-Dimensional Self-Consistent Simulations of Symmetric and Asymmetric Laterally Coupled Vertical Quantum Dots
    R. Ravishankar, P. Matagne, J.-P. Leburton, R. M. Martin, and S. Tarucha
    27. Spin Configurations in Circular and Rectangular Quantum Dot in a Magnetic Field: Three-dimensional Self-consistent Simulations
    Dmitriy V. Melnikov, Philippe Matagne, Jean-Pierre Leburton, D. G. Austing, G. Yu, S. Tarucha, John Fettig, and Nahil Sobh
    28. Spin Charging Sequences in Three Colinear Laterally Coupled Vertical Quantum Dots
    J. Kim, D. V. Melnikov, J.-P. Leburton, D. G. Austing, and S. Tarucha
    29. Many-Body Excitations in the Tunneling Current Spectra of a Few-Electron Quantum Dot
    D. V. Melnikov, T. Fujisawa, D. G. Austing, S. Tarucha, and J.-P. Leburton
    30. Coupled Quantum Dots as Two-Level Systems: A Variational Monte Carlo Approach
    J. Kim, D. V. Melnikov, and J-.P. Leburton
    31. Tunable Many-Body Effects in Triple Quantum Dots
    Jihan Kim, Dmitriy V. Melnikov, and Jean-Pierre Leburton
    Part 3: Self-Assembled Quantum Dots
    32. Self-consistent Calculation of the Electronic Structure and Electron–electron Interaction in Self-assembled InAs-GaAs Quantum Dot Structures
    L. R. C. Fonseca, J. L. Jimenez, J.-P. Leburton, and Richard M. Martin
    33. Electronic Coupling in InAs/GaAs Self-assembled Stacked Double quantum dot Systems
    L. R. C. Fonseca, J. L. Jimenez, and J.-P. Leburton
    34. Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots
    Jean-Pierre Leburton, Leornado R. C. Fonseca, John Shumway, David Ceperley, and Richard M. Martin
    35. Electronic Structure of Self-Assembled Quantum Dots: Comparison Between Density Functional Theory and Diffusion Quantum Monte Carlo
    J. Shumway, L. R. C. Fonseca, J.-P. Leburton, Richard M. Martin, and D. M. Ceperley
    36. Electronic Properties of Inas/Gaas Self-Assembled Quantum Dots: Beyond the Effective Mass Approximation
    Weidong Sheng and Jean-Pierre Leburton
    37. Electron-Hole Alignment in Inas/Gaas Self-Assembled Quantum Dots: Effects of Chemical Composition and Dot Shape
    Weidong Sheng and Jean-Pierre Leburton
    38. Absence of Correlation Between Built-in Electric Dipole Moment and Quantum Stark Effect in Self-Assembled InAs/GaAs Quantum Dots
    Weidong Sheng and Jean-Pierre Leburton
    39. Interband Transition Distributions in the Optical Spectra of InAs/GaAs Self-Assembled Quantum Dots
    Weidong Sheng and Jean-Pierre Leburton
    40. Effects of Thin GaAs Insertion Layer on InAs/(InGaAs)/InP(001) Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
    Kwangmin Park, Pilkyung Moon, Eungjin Ahn, Sukwon Hong, Euijoon Yoon, Jeong Won Yoon, Hyeonsik Cheong, and Jean-Pierre Leburton
    41. Enhanced Intraband Transitions with Strong Electric Field Asymmetry in Stacked Inas/Gaas Self-Assembled Quantum Dots
    Weidong Sheng and Jean-Pierre Leburton
    42. Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots
    Weidong Sheng and Jean-Pierre Leburton
    43. Anomalous Quantum-Confined Stark Effects in Stacked InAs/GaAs Self-Assembled Quantum Dots
    Weidong Sheng and Jean-Pierre Leburton
    44. Spontaneous Localization in InAs/GaAs Self-Assembled Quantum Dot Molecules
    Weidong Sheng and Jean-Pierre Leburton
    45. Enhanced Piezoelectric Effects in Three-Dimensionally Coupled Self-Assembled Quantum Dot Structures
    Pilkyung Moon, Youngsoo Lee, Eungjin Ann, Jungsub Kim, Changjae Yang, Gun-Do Lee, Euijoon Yoon, and Jean-Pierre Leburton
    46. A nisotropic Enhancement of Piezoelectricity in the Optical Properties of Laterally Coupled Inas/Gaas Self-Assembled Quantum Dots
    Weidong Sheng, Jean-Pierre Leburton, Pilkyung Moon, Euijoon Yoon, Weidong Sheng, and Jean-Pierre Leburton
    Part 4: Silicon/Germanium Nanocrystals
    47. Three-Dimensional Self-Consistent Simulation of Silicon Quantum Dot Floating-Gate Flash Memory Device
    A. Thean and J.-P. Leburton
    48. Stark Effect and Single-Electron Charging in Silicon Nanocrystal Quantum Dots
    A. Thean and J.-P. Leburton
    49. Strain Effect in Large Silicon Nanocrystal Quantum Dots
    A. Thean and J.-P. Leburton
    50. Geometry and Strain Effects on Single-Electron Charging in Silicon Nanocrystals
    A. Thean and J.-P. Leburton
    51. Three-Dimensional Self-Consistent Simulation of the Charging Time Response in Silicon Nanocrystal Flash Memories
    J. S. de Sousa, A. V. Thean, J.-P. Leburton, and V. N. Freire
    52. Effects of Crystallographic Orientations on the Charging Time in Silicon Nanocrystal Flash Memories
    J. S. de Sousa, J.-P. Leburton, A. V. Thean, V. N. Freire, and E. F. da Silva, Jr.
    53. Intraband Absorption and Stark Effect in Silicon Nanocrystals
    J. S. de Sousa, J.-P. Leburton, V. N. Freire, and E. F. da Silva, Jr.
    54. Intraband Absorption in Silicon Nanocrystals: The Combined Effect of Shape and Crystal Orientation
    J. S. de Sousa, J.-P. Leburton, V. N. Freire, and E. F. da Silva, Jr.
    55. Hole- Versus Electron-Based Operations in SiGe Nanocrystal Nonvolatile Memories
    J. S. de Sousa, V. N. Freire, and J.-P. Leburton
    56. Light-Induced Programming of Si Nanocrystal Flash Memories
    J. S. de Sousa, G. A. Farias, and J.-P. Leburton
    57. Interface Defect-Assisted Single Electron Charging (and Discharging) Dynamics in Ge Nanocrystals Memories
    J. S. de Sousa, R. Peibst, G. A. Farias, J.-P. Leburton, and K. R. Hofmann

    Biography

    Jean-Pierre Leburton is a Gregory Stillman Professor of Electrical and Computer Engineering and a Professor of Physics at the University of Illinois at Urbana-Champaign (UIUC), Illinois, USA. He is also a professor at the Micro and Nanotechnology Laboratory and Coordinated Science Laboratory, UIUC. His research interests include semiconductor devices, nonlinear transport in semiconductors, electronic and optical properties of quantum well heterostructures and superlattices, physical properties of quantum wires and quantum dots, spin effects in quantum dots, simulation of nanostructures, quantum computation and quantum information processing, and DNA electronic recognition.