1st Edition

Introducing Technology Computer-Aided Design (TCAD) Fundamentals, Simulations, and Applications

By Chinmay K. Maiti Copyright 2017
    438 Pages 25 Color & 229 B/W Illustrations
    by Jenny Stanford Publishing

    438 Pages 25 Color & 229 B/W Illustrations
    by Jenny Stanford Publishing

    This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation.

    Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors.

    The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

    Introduction

    The Need

    Role of TCAD

    TCAD: Challenges

    TCAD: 2D versus 3D

    TCAD: Design Flow

    Extending TCAD

    Process Compact Model

    Process-Aware Design

    Design for Manufacturing

    TCAD Calibration

    TCAD Tools

    Technology Boosters

    BiCMOS Process Simulation

    SiGe and SiGeC HBTs

    Silicon Hetero-FETs

    FinFETs

    Advanced Devices

    Memory Devices

    Power Devices

    Solar Cells

    TCAD for SPICE Parameter Extraction

    TCAD for DFM

    VWF and Online Laboratory

    Summary

    Technology CAD Tools

    History of Process and Device Simulation Tools

    Commercial TCAD Tools

    Silvaco Tool Overview

    ATHENA

    ATLAS

    Stress Modeling

    Synopsys TCAD Platforms

    Atomistic Simulation

    Summary

    Technology Boosters

    Stress Engineering

    Intentional Mechanical Stress

    Stress-Engineered Transistors

    Hybrid Orientation Technology

    High-k/Metal Gate

    Stress Evolution during Semiconductor Fabrication

    Summary

    BiCMOS Process Simulations

    Ion Implantation Simulation

    Optical Lithography Simulation

    Contact-Printing Simulation

    BJT Process Simulation

    3D MOS Process Simulation

    Summary

    SiGe and SiGeC HBTs

    SiGe HBTs: Process and Device Simulation

    High-Speed SiGe HBTs

    SiGeC HBTs: Process and Device Simulation

    Strain-Engineered SiGe HBTs

    n-p-n SiGe HBTs with an Extrinsic Stress Layer

    n-p-n SiGe HBT Device Employing a Si3N4 Strain Layer

    n-p-n SiGe HBT Employing a SiO2 Strain Layer

    Summary

    Silicon Hetero-FETs

    Electronic Properties of Strained Si and SiGe

    Strained-Si Channel p-MOSFETs

    Summary

    FinFETs

    Basics of FinFETs

    Stress-Engineered FinFETs

    FinFET Design and Optimization

    Summary

    Advanced Devices

    Ultrathin-Body SOI

    Gate-First SOI

    Gate-Last SOI

    3D SOI n-MOSFET

    TFT

    HEMTs

    AlGaN/GaN HFET

    3D SiC Process and Device Simulation

    Summary

    Memory Devices

    Nanocrystal Floating-Gate Device

    Technology Computer-Aided Design of Memory Devices

    Process Simulation of Flash Memory Devices

    Device Simulation of Flash Memory Devices

    State Transition and Single-Event Upset in SRAM

    Nanoscale SRAM

    Summary

    Biography

    Chinmay K. Maiti received his B.Sc. (Hons.) in physics (1969), B.Tech. in applied physics (1972), and M.Tech. in radio physics and electronics (1974) from the University of Calcutta, India. He then did his M.Sc. (Res.) in microelectronics (1976) from Loughborough University, UK, and PhD (Eng.) in microelectronics (1984) from the Indian Institute of Technology (IIT), Kharagpur, India. He later joined IIT as professor and was head of the department (2009–2012). From 2004 to 2006 he was a visiting professor at Queen’s University, Belfast, UK. Ignoring an extension offer from IIT, he joined the SOA University, Bhubaneswar, India, in 2015. Dr. Maiti won the INSA-Royal Society (UK) Exchange of Scientists Fellowship in 2003, the CDIL Award for Industry of the Institution of Electronics and Telecommunication Engineers for the best paper in 1997, and the West Bengal Academy of Sciences Fellowship in 2007. He is interested in semiconductor device/process simulation research and microelectronics education. He has published more than 265 technical articles in the silicon-germanium and heterostructure-silicon areas, written 6 monographs and 6 book chapters, and edited Selected Works of Professor Herbert Kroemer (World Scientific, Singapore, 2008).