The first part of a comprehensive overview of fundamental optical properties of III-nitride semiconductors. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the first of a two part Volume in the series Optoelectronic Properties of Semiconductors and Superlattices.
Chapter One: Time-resolved Photoluminescence Studies of III-Nitrides
Chapter Two: Time-resolved Raman Studies of Wide bandgap Wurtzite GaN
Chapter Three: Optical Properties of InGaN Based III-Nitride Heterostructures
Chapter Four: Optical Properties of Homeopitaxial GaN
Chapter Five: Physics and Optical Properties of GaN/InGaN Quantum Wells
Chapter Six: Characterization of GaN and Related Alloys by Raman Scattering
Chapter Seven: Raman Studies of Wurtzite GaN and Related Compounds
Chapter Eight: Light Emission from Rare Earth Doped GaN
Biography
Hongxing Jiang is a Professor in the Department of Physics, Kansas State University, Manhattan, Kansas.
Omar Manasreh, is a Professor in the Department of Electrical & Computer Engineering, at The University of New Mexico, Albuquerque, New Mexico. He is also the editor for the series Optoelectronic Properties of Semiconductors and Superlattices.
""This essential book...is the first to present a systematic, comprehensive overview of the optical properties of III-nitride semiconductors..."
"The style of writing is engagin, which makes the book easily accessible to anyone involved in the development of optoelectronic devices, optical spectroscopy or new materials research."
-Mircea Dragoman, National Research Institute in Microtechnology, Bucharest, Romania.."
Book Reviews
–Optics & Photonics News, June 2004
