767 Pages
    by CRC Press

    767 Pages 441 B/W Illustrations
    by CRC Press

    Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then:

    • Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth
    • Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process
    • Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications

    Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.

    Two-Port Network Parameters
    Traditional Network Parameters
    Scattering Parameters
    Conversions between Two-Port Parameters
    Interconnections of Two-Port Networks
    Practical Two-Port Networks
    Three-Port Network with Common Terminal
    Lumped Elements
    Transmission Line
    Noise Figure
    References

    Power Amplifier Design Principles
    Basic Classes of Operation: A, AB, B, and C
    Load Line and Output Impedance
    Nonlinear Active Device Models
    Power Gain and Stability
    Push–Pull and Balanced Power Amplifiers
    Transmission-Line Transformers and Combiners
    References

    Lossless Matched Broadband Power Amplifiers
    Impedance Matching
    Bode–Fano Criterion
    Broadband-Matching Networks with Lumped Elements
    Broadband-Matching Networks with Mixed Lumped and Distributed Elements
    Matching Networks with Transmission Lines
    Matching Technique with Prescribed Amplitude–Frequency Response
    Practical Examples of Broadband RF and Microwave Power Amplifiers
    Broadband Millimeter-Wave Power Amplifiers
    References

    Lossy Matched and Feedback Broadband Power Amplifiers
    Amplifiers with Lossy Compensation Networks
    Feedback Amplifiers
    Graphical Design of Gain-Compensating and Feedback Lossy Networks
    Decomposition Synthesis Method
    References

    Design of Wideband RF and Microwave Amplifiers Employing Real Frequency Techniques
    Real Frequency Line Segment Technique
    Generation of Minimum Immittance Function from Its Real Part
    Optimization of TPG Using a Parametric Approach
    High-Precision Ladder Synthesis of Positive Real Functions
    Automated Real Frequency Design of Lossless Two-Ports for Single Matching Problems
    Computation of Actual Elements
    Automated Design of Matching Networks with Lumped Elements
    Design of Interstage Equalizers: Double Matching Problem
    Matching Networks Constructed with Commensurate Transmission Lines
    Generation of Realizable Positive Real Function in Richards’s Domain
    Integration of Richards’s High-Precision Synthesis Module with Real Frequency Matching Algorithm
    SRFTs to Design RF and Microwave Amplifiers
    SRFT to Design Microwave Amplifiers
    SRFT Single-Stage Microwave Amplifier Design Algorithm
    Design of an Ultra-Wideband Microwave Amplifier Using Commensurate Transmission Lines
    Physical Realization of Characteristic Impedance
    Practical Design of Matching Networks with Mixed Lumped and Distributed Elements
    Physical Realization of a Single Inductor
    Appendices
    References

    High-Efficiency Broadband Class-E Power Amplifiers
    Reactance Compensation Technique
    High-Efficiency Switching Class-E Modes
    Broadband Class E with Shunt Capacitance
    Broadband Parallel-Circuit Class E
    High-Power RF Class-E Power Amplifiers
    Microwave Monolithic Class-E Power Amplifiers
    CMOS Class-E Power Amplifiers
    References

    Broadband and Multiband Doherty Amplifiers
    Historical Aspect and Conventional Doherty Architectures
    Inverted Doherty Amplifiers
    Integration
    Digitally-Driven Doherty Amplifier
    Multiband and Broadband Capability
    References

    Low-Noise Broadband Amplifiers
    Basic Principles of Low-Noise Amplifier Design
    Lossless Matched Broadband Low-Noise Amplifiers
    Lossy Feedback Broadband Low-Noise Amplifiers
    Cascode Broadband Low-Noise Amplifiers
    Graphical Design Technique
    Broadband Millimeter-Wave Low-Noise Amplifiers
    References

    Distributed Amplifiers
    Basic Principles of Distributed Amplification
    Microwave GaAs FET Distributed Amplifiers
    Cascode Distributed Amplifiers
    Extended Resonance Technique
    Cascaded Distributed Amplifiers
    Matrix Distributed Amplifiers
    CMOS Distributed Amplifiers
    Noise in Distributed Amplifiers
    References

    CMOS Amplifiers for UWB Applications
    UWB Transceiver Architectures
    Distributed CMOS Amplifiers
    Common-Gate CMOS Amplifiers
    CMOS Amplifiers with Lossy Compensation Circuits
    Feedback CMOS Amplifiers
    Noise-Canceling Technique
    References

    Biography

    Andrei Grebennikov earned his engineering diploma in radio electronics from the Moscow Institute of Physics and Technology, Russia, and his Ph.D in radio engineering from the Moscow Technical University of Communications and Informatics, Russia. He worked as an engineer, researcher, lecturer, and educator at Moscow Technical University of Communications and Informatics, Russia; Institute of Microelectronics, Singapore; M/A-COM, Ireland; Infineon Technologies, Germany/Austria; Bell Labs, Alcatel-Lucent, Ireland; and Microsemi Corporation, USA. He served as a guest professor at the University of Linz, Austria, and as an invited speaker at the IEEE International Microwave Symposia, European and Asia-Pacific Microwave Conferences; Institute of Microelectronics, Singapore; Motorola Design Centre, Malaysia; Tomsk State University of Control Systems and Radioelectronics, Russia; and RWTH Aachen University, Germany. A senior member of the IEEE, he has authored and coauthored eight books and more than 100 papers, and has 25 European and U.S. patents and patent applications.

    Narendra Kumar earned his Ph.D in electrical engineering from RWTH Aachen University, Germany. He worked in R&D at Motorola Solutions, USA, as a principal staff engineer. He has several U.S. patents, all assigned to Motorola Solutions, in the area of radio frequency (RF) and microwave amplifier circuitry. Currently, he is an associate professor in the Department of Electrical Engineering at the University of Malaya, Kuala Lumpur, Malaysia. He is also an appointed visiting professor at Istanbul University, Turkey. He has authored and coauthored more than 50 papers in technical journals and conferences, and two international books. He has conducted seminars related to RF and microwave power amplifiers in Europe and Asia Pacific. He is a fellow of the IET, a senior member of the IEEE, and an appointed member of the IEEE Industry Relations Team of Asia Pacific.

    Binboga S. Yarman earned his Ph.D from Cornell University, Ithaca, New York, USA. He was a Microwave Technology Center technical staff member at the David Sarnoff Research Center, Princeton, New Jersey, USA; professor at Anatolia University-Eskisehir, Middle East Technical University-Ankara, Technical University of Istanbul, and Istanbul University, all in Turkey; cofounder of I-ERDEC Maryland, STFA SAVRONIK, and ARES Security Systems, Inc.; chief technical adviser to the Turkish Prime Ministry Office; director of Electronic and Technical Security of Turkey; founding president of Isik University, Istanbul, Turkey; and visiting professor at Ruhr University, Bochum, Germany, and Tokyo Institute of Technology, Japan. Dr. Yarman has published more than 200 papers and four U.S. patents; has received the Young Turkish Scientist Award, National Research and Technology Counsel of Turkey Technology Award, and Man of the Year in Science and Technology of Cambridge Biography Center, UK; and is an IEEE fellow, an Alexander Von Humboldt research fellow, and a member of the New York Academy of Science.

    "… very comprehensive. Each chapter has a strong theoretical foundation. Working on those foundations, the authors provide detailed descriptions and practical examples of a range of power amplifier types. The chapter references are also extensive. … This book is a strong contender to become a standard text for advanced students as well as practicing engineers. … certainly recommended as an addition to serious RF and microwave power amplifier designers and practitioners."
    —Raymond Pengelly, Founder/Owner of Prism Consulting NC, LLC, Hillsborough, North Carolina, USA