1st Edition

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

By John D. Cressler Copyright 2010
    262 Pages 140 B/W Illustrations
    by CRC Press

    What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

    Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

    Contents
    Introduction
    The Big Picture; J.D. Cressler
    A Brief History of the Field; J.D. Cressler
    SiGe and Si Strained-Layer Epitaxy
    Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
    Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
    Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
    MBE Growth Techniques; M. Oehme and E. Kasper
    UHV/CVD Growth Techniques; T.N. Adam
    Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
    Stability Constraints in SiGe Epitaxy; A. Fischer
    Electronic Properties of Strained Si/SiGe and Si1–yCy Alloys; J.L. Hoyt
    Carbon Doping of SiGe; H.J. Osten
    Contact Metallization on Silicon–Germanium; C.K. Maiti
    Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
    Appendices
    Properties of Silicon and Germanium; J.D. Cressler
    The Generalized Moll-Ross Relations; J.D. Cressler
    Integral Charge-Control Relations; M. Schröter
    Sample SiGe HBT Compact Model Parameters; R.M. Malladi
    Index

    Biography

    John D. Cressler