1st Edition
Physics of Semiconductors and Nanostructures
This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book.
Key Features
- Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice
- In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique
- Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect
- Presents the optical processes in nanostructures under a magnetic field
- Includes illustrative problems with hints for solutions in each chapter
Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.
Preface
Organization of the Book
Acknowledgments
Authors
1 Crystalline Structure of Different Semiconductors
2 Quantum Theory, Energy Bands of Solids, Effective Mass, and Holes
3 Physics of Semiconductors
4 Transport Phenomena in Semiconductors
5 Low-Dimensional Semiconductors
6 Semiconductor Heterojunctions, Modulation-Doped Quantum Wells, and Superlattices
7 Transport Phenomena in Quantum Nanostructures under an Electric Field
8 Effect of Magnetic Field on the Transport Phenomena in Quantum Nanostructures
9 Optical Properties of Quantum Nanostructures
Appendix A.1: Some Fundamental Physical Constants
Appendix A.2: Some Important Parameters of Germanium, Silicon, and Gallium Arsenide at T = 300 K
Index
Biography
Jyoti Prasad Banerjee (Bandyopadhyay) received Master’s degree in Physics and PhD degree in (Technology) from the Institute of Radio Physics and electronics, University of Calcutta, India. He is the author of about two hundred publications in reputed scientific journals. He started his teaching career as lecturer in Physics of an undergraduate college affiliated under the University of Calcutta in 1971. After completing PhD degree, he joined as a senior scientist in the Institute of Radio Physics and Electronics, University of Calcutta. Thereafter he joined the Department of Electronic Science, University of Calcutta as Associate Professor in the year, 1989 and subsequently joined the Department of Radio Physics and Electronics of the same University as a full Professor. Later in 2008, he became the Director of Centre of Millimeter wave Semiconductor Devices and Systems (CMSDS) in the University of Calcutta. After his retirement from the University service, he was awarded Emeritus Fellowship by the University Grants Commission, New Delhi, India to work in his parent department. His research interest in general covers microwave, microelectronic, optoelectronic and quantum effect Devices. He has published about 200 research articles in international journals of repute and also a number of text books on Solid State electronic Devices, Basic electrical and Electronics Engineering and Physics of Semiconductor Devices. He has supervised a large number of doctoral theses of students in the field of microwave semiconductor devices. He is the recipient of Indian National Science Academy (INSA) award and Griffith Memorial Prize in Science from the University of Calcutta. He is a Fellow of IETE, New Delhi. He is presently looking after the academic growth and development of Kingston Educational Institute, Barasat, West Bengal, India comprising Science, Technology, Management and Law colleges as Academic Chairman.
Suranjana Banerjee received B.Sc. (Honours), B.Tech and M. Tech degrees all from the University of Calcutta. He was awarded PhD (Engineering) degree from Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah, India. She joined the Department of Electronics and Telecommunication Engineering, IIEST, Shibpur as an Assistant Professor in the year, 2016. She has authored about 30 research papers in referred technical and scientific journals. Her present area of research is Design and Simulation of Wide Band Gap semiconductors for Terahertz application.
"The overall concerns of this stimulating book are aptly captured by its title. Like the book, its authors are from India and connect at a high level with the scientific world at large. First author Jyoti Prasad Banerjee (Univ. of Calcutta) has supervised many doctoral students, also serving as academic chairman of Kingston Educational Institute in West Bengal. Second author Suranjana Banerjee (Indian Institute of Engineering Science and Technology, Shibpur) is also active in both teaching and research. This book connects usefully with physics, materials science, and related areas. Chapters also include problems (some are provided with hints) before the pertinent bibliographic references. Overall, this book is both challenging to read and an excellent resource."
--A. E. Viste, emeritus, Augustana University, CHOICE, January 2020 Vol. 57 No. 5
Summing Up: Highly recommended. Upper-division undergraduates through faculty and professionals.
