2nd Edition

The MOCVD Challenge A survey of GaInAsP-InP and GaInAsP-GaAs for photonic and electronic device applications, Second Edition

By Manijeh Razeghi Copyright 2011
    800 Pages 579 B/W Illustrations
    by CRC Press

    800 Pages 579 B/W Illustrations
    by CRC Press

    Written by one of the driving forces in the field, The MOCVD Challenge is a comprehensive review covering GaInAsP–InP, GaInAsP–GaAs, and related material for electronic and photonic device applications. These III-V semiconductor compounds have been used to realize the electronic, optoelectronic, and quantum devices that have revolutionized telecommunications. The figure on the back cover gives the energy gap and lattice parameter for the entire compositional range of the binary, ternary, and quaternary combinations of these III-V elements. By understanding the material and learning to control the growth new devices become possible: the front cover shows the world’s first InP/GaInAs superlattice that was fabricated by the author — this has gone on to be the basis of modern quantum devices like quantum cascade lasers and quantum dot infrared photodetectors.

    Now in its second edition, this updated and combined volume contains the secrets of MOCVD growth, material optimization, and modern device technology. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization for MOCVD growth. Next, the book examines in detail the specifics of the growth of GaInP(As)-GaAs and GaInAs(P)-InP material systems. It examines MOCVD growth of various III-V heterojunctions and superlattices and discusses electronic and optoelectronic devices realized with this material. Spanning 30 years of research, the book is the definitive resource on MOCVD.

    Introduction to Semiconductor Compounds
    III–V semiconductor alloys
    III–V semiconductor devices
    Technology of multilayer growth
    Growth Technology
    Metalorganic chemical vapor deposition
    New non-equilibrium growth techniques
    In situ Characterization during MOCVD
    Reflectance anisotropy and ellipsometry
    Optimization of the growth of III–V binaries by RDS
    RDS investigation of III–V lattice-matched heterojunctions
    RDS investigation of III–V lattice-mismatched structures
    Insights on the growth process
    Ex situ Characterization Techniques
    Chemical bevel revelation
    Deep-level transient spectroscopy
    X-ray diffraction
    Photoluminescence
    Electromechanical capacitance-voltage and photovoltage spectroscopy
    Resistivity and Hall measurement
    Thickness measurement
    MOCVD Growth of GaAs Layers
    GaAs and related compounds band structure
    MOCVD growth mechanism of GaAs and related compounds
    Experimental details
    Incorporation of impurities in GaAs grown by MOCVD
    Growth and Characterization of the GaInP–GaAs System
    Growth details
    Structural order in GaxIn1−xP alloys grown by MOCVD
    Defects in GaInP layers grown by MOCVD
    Doping behavior of GaInP
    GaAs–GaInP heterostructures
    Growth and characterization of GaInP–GaAs multilayers by MOCVD
    Optical and structural investigations of GaAs–GaInP quantum wells and superlattices grown by MOCVD
    Characterization of GaAs–GaInP quantum wells by auger analysis of chemical bevels
    Evaluation of the band offsets of GaAs–GaInP multilayers by electroreflectance
    Intersubband hole absorption in GaAs–GaInP quantum wells
    Optical Devices
    Electro-optical modulators
    GaAs-based infrared photodetectors grown by MOCVD
    Solar cells and GaAs solar cells
    GaAs-Based Lasers
    Basic physical concepts
    Laser structures
    New GaAs-based materials for lasers
    GaAs-Based Heterojunction Electron Devices Grown by MOCVD
    Heterostructure field-effect transistors (HFETs)
    Heterojunction bipolar transistors (HBTs)
    Optoelectronic Integrated Circuits (OEICs)
    Material considerations
    OEICs on silicon substrates
    The role of optoelectronic integration in computing
    Examples of optoelectronic integration by MOCVD
    InP–InP System: MOCVD Growth, Characterization, and Applications
    Energy band structure of InP
    Growth and characterization of InP using TEIn
    Growth and characterization of InP using TMIn
    Incorporation of dopants
    Applications of InP epitaxial layers
    GaInAs–InP System: MOCVD Growth, Characterization, and Applications
    Growth conditions
    Optical and crystallographic properties, and impurity incorporation in GaInAs grown by MOCVD
    Shallow p+ layers in GaInAs grown by MOCVD by mercury implantation
    GaInAs–InP heterojunctions: Multiquantum wells and superlattices grown by MOCVD
    Magnetotransport in GaInAs–InP heterojunctions grown by MOCVD
    Applications of GaInAs–InP system grown by MOCVD
    GaInAsP–InP System: MOCVD Growth, Characterization, and Applications
    Growth conditions
    Characterization
    Applications of GaInAsP–InP systems grown by MOCVD
    Strained Heterostructures: MOCVD Growth, Characterization, and Applications
    Growth procedure and characterization
    Growth of GaInAs–InP multiquantum wells on GGG substrates
    Applications
    Monolayer epitaxy of (GaAs)n(InAs)n–InP by MOCVD
    MOCVD Growth of III–V Heterojunctions and Superlattices on Silicon Substrates
    MOCVD growth of GaAs on silicon
    InP grown on silicon
    GaInAsP–InP grown on silicon
    Applications
    Optoelectronic Devices Based on Quantum Structures
    GaAs and InP based quantum well infrared photodetectors (QWIP)
    Self-assembled quantum dots, and quantum dot based photodetectors
    Quantum dot lasers
    InP based quantum cascade lasers (QCLs)

    Biography

    Manijeh Razeghi is with the Center of Quantum Devices at Northwestern University.

    … a comprehensive review of GaInAsP-InP and GaInAsP-GaAs materials, III-V semiconductor compounds used for photonic and electronic device applications. This second edition represents the combined updated versions of the MOCVD Challenge. The author addresses a variety of relevant topics, including: growth technology, in situ characterization during MOCVD, ex situ characterization techniques, growth of GaAs layers, growth and characterization of the GaInP-GaAs system, optical devices, GaAs-based layers, optoelectronic integrated circuits, and optoelectronic devices on quantum structures.
    SciTech Book News, February 2011