Spacer Engineered FinFET Architectures: High-Performance Digital Circuit Applications

Sudeb Dasgupta, Brajesh Kumar Kaushik, Pankaj Kumar Pal

June 8, 2017 Forthcoming by CRC Press
Reference - 138 Pages - 39 Color & 49 B/W Illustrations
ISBN 9781498783590 - CAT# K30098

USD$139.95

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Features

  • Contains latest research updates and presents both the theory behind FinFETs operation and the most important applications such as SRAMs
  • Provides device and capacitance analysis using symmetric and asymmetrical tri-gate architectures
  • Introduces various FinFET structures including advanced structures comprehensively
  • Presents a non-conventional structure of FinFETs in terms of proposal, mechanism, impacts
  • Features separate chapter on digital circuit and SRAM circuit design using FinFETs

Summary

This book focuses towards the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability and reliabilities issues. This book comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations. This book concentrates on last ten years of cutting-edge research on high-permittivity materials and its usage in FinFETs either as gate-dielectric or spacer engineering. It specifically targets spacer engineering, discussing its pros and cons with FinFETs covers complete device to circuit perspective while exploring its variability aspects also.