This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Table of Contents
1. Introduction 2. Si-MBE Growth Systems � Technology and Practice 3. Homoepitaxy 4. Models of Silicon Growth and Dopant Incorporation 5. Insulator over Silicon Structures 6. Growth Insulators on Si by MBE 7. Device Application: Work to Date 8. Device Application- Possibilities