1st Edition

Quaternary Alloys Based on II - VI Semiconductors

By Vasyl Tomashyk Copyright 2015
    533 Pages
    by CRC Press

    534 Pages
    by CRC Press

    Doped by isovalent or heterovalent foreign impurities, II–VI semiconductor compounds enable control of optical and electronic properties, making them ideal in detectors, solar cells, and other precise device applications. Quaternary alloys allow a simultaneous adjustment of band gap and lattice constant, increasing radiant efficiency at a wide range of wavelengths.



    Quaternary Alloys Based on II–VI Semiconductors consolidates data pertaining to diagrams of quaternary systems based on these semiconductor compounds. The book illustrates up-to-date experimental and theoretical information about phase relations based on II–VI semiconductor systems with four components. It critically evaluates many industrially significant systems presented in two-dimensional sections for the condensed phases.





    The author classifies all materials according to the periodic groups of their constituent atoms and additional components in the order of their group number. Each quaternary database description contains brief information on the diagram type, possible phase transformations and physical–chemical interactions of the components, thermodynamic characteristics, and methods for equilibrium investigation and sample preparation. Most of the phase diagrams are in their original form. For those with varying published data, the text includes several versions for comparison.





    This book provides invaluable data for technologists and researchers involved in developing and manufacturing II–VI semiconductors at industrial and national laboratories. It is also suitable for phase relations researchers, inorganic chemists, and semiconductor physicists as well as graduate students in materials science and engineering.





    Check out the companion books: Ternary Alloys Based on II–VI Semiconductor Compounds and

    Biography

    Vasyl Tomashyk is Professorat V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine.