November 14, 2017
by Pan Stanford
Reference - 306 Pages - 10 Color & 178 B/W Illustrations
ISBN 9789814774222 - CAT# N11929
Series: Pan Stanford Series on Intelligent Nanosystems
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Since its invention, the integrated circuit has necessitated new process modules and numerous architectural changes to improve application performances, power consumption, and cost reduction. Silicon CMOS is now well established to offer the integration of several tens of billions of devices on a chip or in a system. At present, there are important challenges in the introduction of heterogeneous co-integration of materials and devices with the silicon CMOS 2D- and 3D-based platforms. New fabrication techniques allowing strong energy and variability efficiency come in as possible players to improve the various figures of merit of fabrication technology.
Integrated Nanodevice and Nanosystem Fabrication: Breakthroughs and Alternatives is the second volume in the Pan Stanford Series on Intelligent Nanosystems. The book contains 8 chapters and is divided into two parts, the first of which reports breakthrough materials and techniques such as single ion implantation in silicon and diamond, graphene and 2D materials, nanofabrication using scanning probe microscopes, while the second tackles the scaling and architectural aspects of silicon devices through HiK scaling for nanoCMOS, nanoscale epitaxial growth of group IV semiconductors, design for variability co-optimization in SOI FinFETs, and nanowires for CMOS and diversifications.
Introduction: Will new materials, fabrication and architecture schemes emerge for CMOS survival?
Deterministic single-ion implantation method for quantum processing in silicon and diamond
Takahiro Shinada , Enrico Prati, Takashi Tanii
Graphene and two-dimensional materials : extending silicon technology for the future?
Andreas Bablich, Satender Kataria, Vikram Passi, Max C. Lemme
Nanofabrication using scanning probe microscopes
High-k dielectric scaling for nano CMOS technology
Hei Wong, Takamasa Kawanago, Kuniyuki Kakushima, Hiroshi Iwai
Nanometer scale epitaxial growth of group IV semiconductors
TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs
Xingsheng Wang, Vihar P. Georgiev, Fikru Adamu-Lema, Louis Gerrer, Salvatore M. Amoroso, Asen Asenov
Nanowires for CMOS and diversifications
Thomas Ernst, Sylvain Barraud