This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Table of Contents
Chapter One: Optical Spectroscopy of Highly Excited Group III-Nitrides
Chapter Two: Optical Constraints of III-Nitrides-Experiments
Chapter Three: Optical Functions of III-Nitrides-Calculations
Chapter Four: Interband Optical Transitions in Piezo-Strained InGaN Qunatum Wells
Chapter Five: Electric Fields in Polarized InGaN/GaN Heterostructures
Chapter Six: Inter-link Between Structural and Optical Properties of GaN and GaN/AIGaN Heterostructures
Chapter Seven: LO Phonon Assisted Excition Luminescence Processes in Heteroepitaxial GaN Films
Chapter Eight: Cubic Phase GaN and AIGaN: Expitaxial Growth and Optical Properties