High-k Gate Dielectric Materials: Applications with Advanced Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

1st Edition

Niladri Pratap Maity, Reshmi Maity, Srimanta Baishya

Apple Academic Press
February 15, 2020 Forthcoming
Reference - 278 Pages - 22 Color & 69 B/W Illustrations
ISBN 9781771888431 - CAT# K441127

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Summary

This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components (or Moore’s law).

This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. Then it discusses the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the different deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book.

 

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