Dopants and Defects in Semiconductors

2nd Edition

Matthew D. McCluskey, Matthew D. McCluskey, Eugene E. Haller, Eugene E. Haller

CRC Press
Published February 28, 2018
Reference - 350 Pages
ISBN 9781138035195 - CAT# K31687

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Summary

Praise for the First Edition

"The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading, broad introductory overview of the field"
Materials Today

"… well written, with clear, lucid explanations …"
―Chemistry World

This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.

Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley.

Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

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