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Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.
Table of Contents
Saturation of Free Carrier Concentration inSemiconductors The Amphoteric Defect Model Maximum Doping Limits in GaAs Other Group III-V Semiconductors Group III-Nitrides Group II-VI Semiconductors Group I-III-VI2 Ternaries Other Semiconductors Unintentional Doping Amphoteric Dopants Point Defect Formation Near Surfaces Point Defect Equilibria near the Semiconductor Surfaces Point Defect Formation Kinetics in the Sub-Surface Layer - Bottleneck Effect Bottleneck Related Phenomena Optical Characterization of PlasmaEtching Induced Damage Ion-assisted Etching: Understanding the Problem Optical Damage Assessment Techniques: Choosing a Method The Range of Ion-Induced Damage Dry Etch Damage in Widegap SemiconductorMaterials Damage in the InGaA1N System Damage in SiC Damage in II-VI Compounds Generation, Removal,and Passivation of Plasma Process Induced Defects Dry Etching Systems Plasma Process Indu
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CHOICE – Outstanding Academic Title – Award Winner
CHOICE – 2018 Outstanding Academic Title – Award Winner
Shingo Research and Professional Publication Award Winner
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