1st Edition

Compact Models for Integrated Circuit Design Conventional Transistors and Beyond

By Samar K. Saha Copyright 2016
    548 Pages
    by CRC Press

    545 Pages 203 B/W Illustrations
    by CRC Press

    Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.

    Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:

    • Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
    • Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
    • Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
    • Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
    • Includes exercise problems at the end of each chapter and extensive references at the end of the book

    Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book.

    Introduction to Compact Models
    Compact Models for Circuit Simulation
    Brief History of Compact Device Modeling
    Motivation for Compact Modeling
    Compact Model Usage
    Compact Model Standardization
    Summary
    Exercises

    Review of Basic Device Physics
    Introduction
    Semiconductor Physics
    Theory of n-Type and p-Type Semiconductors in Contact
    Summary
    Exercises

    Metal-Oxide-Semiconductor System
    Introduction
    MOS Capacitor at Equilibrium
    MOS Capacitor under Applied Bias
    MOS Capacitor Theory
    Capacitance of MOS Structure
    Summary
    Exercises

    Large Geometry MOSFET Compact Models
    Introduction
    Overview of MOSFET Devices
    MOSFET Threshold Voltage Model
    MOSFET Drain Current Model
    Summary
    Exercises

    Compact Models for Small Geometry MOSFETs
    Introduction
    Threshold Voltage Model
    Drain Current Model
    Substrate Current Model
    Summary
    Exercises

    MOSFET Capacitance Models
    Introduction
    Basic MOSFET Capacitance Model
    Charge-Based Capacitance Model
    Gate Overlap Capacitance Model
    Limitations of the Quasistatic Model
    S/D pn-Junction Capacitance Model
    Summary
    Exercises

    Compact MOSFET Models for RF Applications
    Introduction
    MOSFET Noise Models
    NQS Effect
    Modeling Parasitic Elements for RF Applications
    Summary
    Exercises

    Modeling Process Variability in Scaled MOSFETs
    Introduction
    Sources of Front-End Process Variability
    Characterization of Parametric Variability in MOSFETs
    Conventional Process Variability Modeling for Circuit CAD
    Statistical Compact Modeling
    Mitigation of the Risk of Process Variability in VLSI Circuit Performance
    Summary
    Exercises

    Compact Models for Ultrathin Body FETs
    Introduction
    Multigate Device Structures
    Common Multiple-Gate FinFET Model
    Independent Multiple-Gate FET Model
    Dynamic Model
    Summary
    Exercises

    Beyond-CMOS Transistor Models: Tunnel FETs
    Introduction
    Basic Features of TFETs
    Basic Theory of TFET Operation
    TFET Design Considerations
    Compact TFET Models
    Summary
    Exercises

    Bipolar Junction Transistor Compact Models
    Introduction
    Basic Features of BJTs
    Basic Operation of BJTs
    Mode of Operations of BJTs
    Compact BJT Model
    Summary
    Exercises

    Compact Model Library for Circuit Simulation
    Introduction
    General Approach to Generate Compact Device Model
    Model Usage
    Summary
    Sample Model Cards

    Biography

    Samar K. Saha holds a Ph.D from Gauhati University, and an M.S.EM from Stanford University. He is currently adjunct professor at Santa Clara University, technical advisor at Ultrasolar Technology, distinguished lecturer and 2016–2017 president of the IEEE Electron Devices Society, and fellow of the Institution of Engineering and Technology. He previously worked for National Semiconductor, LSI Logic, Texas Instruments, Philips Semiconductors, Silicon Storage Technology, Synopsys, DSM Solutions, Silterra USA, and SuVolta, and served as a faculty member at Southern Illinois University at Carbondale, Auburn University, University of Nevada at Las Vegas, and the University of Colorado at Colorado Springs.

    "A comprehensive book deeply rooted into the physics foundation of the devices being modeled… It convinces the reader, providing confidence in the inherently quite complex equations involved in compact modeling. Moreover, the inclusion of a chapter on process variability in miniaturized devices gives the entire book a deep sense of realism."
    —Constantin Bulucea, IEEE Journal of Electron Devices Society (J-EDS)

    "A comprehensive compendium on generic MOSFET compact modeling for both students and practitioners in electronic circuit design. … This text book provides a valueable insight of generic MOSFET compact modeling and is, thus, well suited for students in electronics engineering."
    —Prof. Dr. Joachim Burghartz, Institute for Microelectronics Stuttgart (IMS CHIPS)

    "This is an excellent book written in lucid language and covers almost all the topics related to modeling of MOS system both electrostatics and transport. It is useful for both beginners and experts in the field of compact modeling. Chapter 8 on statistical variability and chapter 12 on library will be definitely useful as these chapters are not covered in other books."
    —Yogesh Singh Chauhan, Indian Institute of Technology (IIT) Kanpur

    "The writing style of the author is very visual and transforms the material from sequential mathematical derivations into a usable mental image through precise descriptions of the device physics and model limitations."
    —Bill Nehrer, PDF Solutions

    "…is extremely timely and something the community has been waiting for.

    This book is well written, with an in depth explanation of basic concepts as well as advanced topics. This would serve not only as an introductory text book on modeling for students but also as a good refresher book for experts working in the field. Personally, this is the book I have been waiting for, and would order one right away."
    —V.Ramgopal Rao, P.K.Kelkar Chair Professor, IIT Bombay, India