1st Edition

Atomic Diffusion in III-V Semiconductors

By Brian Tuck Copyright 1988

    III-V semiconductors, of which gallium arsenide is the best known, have been important for some years and appear set to become much more so in the future. They have principally contributed to two technologies: microwave devices and optoelectronics. Recent advances in the production of thin layers have made possible a whole new range of devices based on multi-quantum wells. The heat treatments used in the manufacture of semiconductor devices means that some diffusion must take place. A good understanding of diffusion processes is therefore essential to maintain control over the technology.

    Atomic Diffusion in III-V Semiconductors presents a lucid account of the experimental work that has been carried out on diffusion in III-Vs and explores the advanced models that explain the results. A review of the III-V group of semiconductors outlines the special properties that make them so attractive for some types of devices. Discussion of the basic elements of diffusion in semiconductors provides the theory necessary to understand the subject in depth, and the book gives hints on how to assess the published data. Chapters on diffusion of shallow donors, shallow acceptors, transition elements, and very fast-diffusing elements provide a critical review of published works. The book also presents the neglected subject of self-diffusion, including a section on superlattices. Atomic Diffusion in III-V Semiconductors will be of interest to research workers in semiconductor science and technology, and to postgraduate students in physics, electronics, and materials science.

    PREFACE

    GALLIUM ARSENIDE AND FRIENDS

    ELEMENTS OF DIFFUSION
    The diffusion equations
    Analytical solutions to the diffusion equation
    Finite difference methods of solution
    Experimental techniques
    Analysis of results
    Interaction of defects
    The built-in field effect
    The external system
    Assessment of published data

    DIFFUSION OF SHALLOW DONORS, INCLUDING GROUP IV
    Sulphur
    Selenium and tellurium
    Tin
    Silicon and germanium

    SHALLOW ACCEPTORS, ESPECIALLY ZINC
    The substitutional-interstitial mechanism
    Zinc in GaAs
    Zinc in gallium phosphide
    Zinc in indium phosphide
    Zinc in other compounds
    Cadmium in InP
    Cadmium in other compounds
    Diffusion of other group II elements

    DIFFUSION OF TRANSITION ELEMENTS
    Chromium in GaAs
    Manganese in GaAs
    Iron in GaAs
    Cobalt in GaAs
    Iron and chromium in InP

    OTHER FAST DIFFUSERS
    Silver in InP
    Silver in GaAs
    Silver in InAs and GaP
    Diffusion of gold
    Diffusion of copper

    SELF-DIFFUSION AND RELATED PHENOMENA
    Diffusion in GaAs
    InP and InAs
    Self-diffusion in InSb
    Diffusion in GaSb
    Diffusion in superlattices

    Biography

    Brian Tuck

    "… comprehensive answers to many practical questions, those seeking more detailed treatment are directed to an excellent bibliography. … concise text of outstanding clarity. Because of these rare qualities the book is strongly recommended for inclusion in libraries associated with either academic or industrial institutions where semiconductor technology is taught or practised."
    -The Australian Physicist