Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices

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ISBN 9781420059113
Cat# 59114

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Features

  • Describes the materials science and engineering behind the CMP process
  • Provides a technology roadmap for the CMP process and slurries
  • Presents a detailed guide to nanoparticle engineering of novel CMP slurries for next-generation devices
  • Discusses design techniques of chemicals according to the target films
  • Explains the relationship between material parameters and CMP performance

Summary

In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.

Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.

Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.

Table of Contents

Overview of CMP Technology

Motivation and Background

The Key Factors of CMP Process

 

Interlayer Dielectric CMP

Interlayer Dielectric (ILD) CMP Process

Rheological and Electrokinetic Behavior of Nano Fumed Silica Particle for ILD CMP

Particle Engineering for Improvement of CMP Performance

PAD Dependency in ILD CMP

ILD Pattern Dependencies

 

Shallow Trench Isolation CMP

Requirement for High Selectivity Slurry

Particle Engineering of Ceria Nanoparticles and Their Influence on CMP Performance

Chemical Engineering for High Selectivity in STI CMP

Force Measurement Using Atomic Force Microscopy for

Mechanism

Pattern Dependence of High-Selectivity Slurry

 

Copper CMP

Introduction

High Selectivity for Copper CMP

Copper CMP Pattern Dependence

 

Nanotopography

What Is Nanotopography?

Why Nanotopography Is Important

Impact of Nanotopography on CMP

Equipment in Measuring the Nanotopography

 

Novel CMP for Next-Generation Devices

The Progress of Semiconductor Devices upon Current Demand

Complementary Metal-Oxide Semiconductor (CMOS) Memory

Novel CMP for New Memory

 

References

Index