RF and Microwave Passive and Active Technologies

Series:
The RF and Microwave Handbook, Second Edition
Published:
December 22, 2007 by CRC Press - 736 Pages
Editor(s):
Mike Golio, HVVi Semiconductors, Inc., Phoenix, Arizona, USA; Janet Golio

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Features

  • Examines the challenges of integrated circuits for microwave and RF applications (MMCs and RFICs) present for design, layout, characterization, and test
  • Covers device technologies such as transit time devices, HEMTs and certain vacuum tubes used almost exclusively for high frequency applications
  • Explores the potential of Widebandgap Nitride transistors and their properties characteristic to high frequency applications
  • Discusses the behavior of materials such as metals, dielectrics, ferroelectrics, and semiconductors in terms of the more complex models required when used as part of a microwave system
  • Includes discussions of microwave packaging and antenna considerations

    • Summary

    In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems.

    Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.

    Table of Contents

    Introduction, P. Fay
    Microwave and RF Engineering, M. Golio

    Passive Technologies


    Passive Lumped Components, A. Riddle
    Passive Microwave Devices, M.B. Steer
    Dielectric Resonators, S.J. Fiedziuszko
    RF MEMS, K.R. Varian
    Surface Acoustic Wave (SAW) Filters, D.C. Malocha
    RF Coaxial Cables, M.E. Majerus
    Coaxial Connectors, D. Anderson
    Antenna Technology, J.B. West
    Phased Array Antenna Technology, J.B. West
    The Fresnel Zone Plate Antenna, J.C. Wiltse
    RF Package Design and Development, J.S. Pavio

    Active Device Technologies


    Varactors, J. Stake
    Schottky Diode Frequency Multipliers, J.R. East and I. Mehdi
    Transit Time Microwave Devices Transistors, R.J. Trew
    Bipolar Junction Transistors (BJTs), J.C. Cowles
    Heterostructure Bipolar Transistors (HBTs), W. Liu
    Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), J. Costa,M. Carroll, A. Rezvani, and T. Mckay
    RFCMOS Modeling & Circuit Applications, J. Costa,M. Carroll, A. Rezvani, and T. Mckay
    Metal Semiconductor Field Effect Transistors (MESFETs), M.S. Shur
    High Electron Mobility Transistors (HEMTs), Mishra, Chavarkar
    Nitride Devices, R.J. Trew
    Microwave Power Tubes, J.C. Whitaker
    Monolithic Microwave IC Technology, L.P. Dunleavy
    RF IC design tradeoffs (Bringing RFICs to the Market), J.C. Cowles

    Materials Properties


    Metals, M. Golio
    Dielectrics, K.F. Etzold
    Ferroelectrics and Piezoelectrics, K.F. Etzold
    Material Properties of Semiconductors, H.M. Harris
    Appendix A: Mathematics, Symbols, and Physical Constants
    Appendix B: Microwave Engineering Appendix, J.P. Wendler

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