1st Edition

Silicon Heterostructure Handbook Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy

Edited By John D. Cressler Copyright 2005
    1248 Pages 871 B/W Illustrations
    by CRC Press

    An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

    Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology.

    Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

    Foreword; B.S. Meyerson
    INTRODUCTION
    The Big Picture; J.D. Cressler
    A Brief History of the Field; J.D. Cressler
    SiGe AND Si STRAINED-LAYER EPITAXY
    Overview: SiGe and Si Strained-Layer Epitaxy; J.D. Cressler
    Strained SiGe and Si Epitaxy; B. Tillack and P. Zaumseil
    Si/SiGe(C) Eptiaxy by RTCVD; D. Dutartre, F. Deléglise, C. Fellous, L. Rubaldo, and A. Talbot
    MBE Growth Techniques; M. Oehme and E. Kasper
    UHV/CVD Growth Techniques; T.N. Adam
    Defects and Diffusion in SiGe and Strained Si; A.R. Peaker and V. Markevich
    Stability Constraints in SiGe Epitaxy; A. Fischer
    Electronic Properties of Strained Si/SiGe and Si1-yCy Alloys; J.L. Hoyt
    Carbon Doping of SiGe; H.J. Osten
    Contact Metallization on Silicon-Germanium; C.K. Maiti
    Selective Etching Techniques for SiGe/Si; S. Monfray, S. Borel, and T. Skotnicki
    FABRICATION OF SiGe HBT BiCMOS TECHNOLOGY
    Overview: Fabrication of SiGe HBT BiCMOS Technology; J.D. Cressler
    Device Structures and BiCMOS Integration; D.L. Harame
    SiGe HBTs on CMOS-Compatible SOI; J. Cai and T.H. Ning
    Passive Components; J.N. Burghartz
    Industry Examples at State-of-the-Art: IBM; A.J. Joseph and J.S. Dunn
    Industry Examples at State-of-the-Art: Jazz; P.H.G. Kempf
    Industry Examples at State-of-the-Art: Hitachi; K. Washio
    Industry Examples at State-of-the-Art: Infineon; T.F. Meister, H. Schäfer, W. Perndl, and J. Böck
    Industry Examples at State-of-the-Art: IHP; D. Knoll
    Industry Examples at State-of-the-Art: ST; A. Chantre, M. Laurens, B. Szelag, H. Baudry, P. Chevalier, J. Mourier, G. Troillard, B. Martinet, M. Marty, and A. Monroy
    Industry Examples at State-of-the-Art: Texas Instruments; B. El-Kareh, S. Balster, P. Steinmann, and H. Yasuda
    Industry Examples at State-of-the-Art: Philips; R. Colclaser and P. Deixler
    SiGe HBTs
    Overview: SiGe HBTs; J.D. Cressler
    Device Physics; J.D. Cressler
    Second-Order Effects; J.D. Cressler
    Low-Frequency Noise; G. Niu
    Broadband Noise; D.R. Greenberg
    Microscopic Noise Simulation; G. Niu
    Linearity; G. Niu
    pnp SiGe HBTs; J.D. Cressler
    Temperature Effects; J.D. Cressler
    Radiation Effects; J.D. Cressler
    Reliability Issues; J.D. Cressler
    Self-Heating and Thermal Effects; J-S. Rieh
    Device-Level Simulation; G. Niu
    SiGe HBT Performance Limits; G. Freeman, A. Stricker, J-S. Rieh, and D.R. Greenberg
    HETEROSTRUCTURE FETs
    Overview: Heterostructure FETs; J.D. Cressler
    Biaxial Strained Si CMOS; K. Rim
    Uniaxial Stressed Si MOSFET; S.E. Thompson
    SiGe-Channel HFETs; S. Banerjee
    Industry Examples at State-of-the-Art: Intel's 90 nm Logic Technologies; S.E. Thompson
    OTHER HETEROSTRUCTURE DEVICES
    Overview: Other Heterostructure Devices; J.D. Cressler
    Resonant Tunneling Devices; S. Tsujino, D. Grützmacher, and U. Gennser
    IMPATT Diodes; E. Kasper and M. Oehme
    Engineered Substrates for Electronic and Optoelectronic Systems; E.A. Fitzgerald
    Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy; R. Hull
    OPTOELECTRONIC COMPONENTS
    Overview: Optoelectronic Components; J.D. Cressler
    Si-SiGe LEDs; K.L. Wang, S. Tong, and H.J. Kim
    Near-Infrared Detectors; L. Colace, G. Masini, and G. Assanto
    Si-Based Photonic Transistors for Integrated Optoelectronics; W.X. Ni and A. Elfving
    Si-SiGe Quantum Cascade Emitters; D.J. Paul
    MEASUREMENT AND MODELING
    Overview: Measurement and Modeling; J.D. Cressler
    Best-Practice AC Measurement Techniques; R.A. Groves
    Industrial Application of TCAD for SiGe Development; D.C. Sheridan, J.B. Johnson, and R. Krishnasamy
    Compact Modeling of SiGe HBTs: HICUM; M. Schröter
    Compact Modeling of SiGe HBTs: MEXTRAM; S. Mijalkovic
    CAD Tools and Design Kits; S.E. Strang
    Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs; R. Singh
    Transmission Lines on Si; Y.V. Tretiakov
    Improved De-Embedding Techniques; Q. Liang
    CIRCUITS AND APPLICATIONS
    Overview: Circuits and Applications; J.D. Cressler
    SiGe as an Enabler for Wireless Communications Systems; L.E. Larson and D.Y.C. Lie
    LNA Optimization Strategies; Q. Liang
    Linearization Techniques; L.C.N. de Vreede and M.P. van der Heijden
    SiGe MMICs; H. Schumacher
    SiGe Millimeter-Wave ICs; J-F. Luy
    Wireless Building Blocks Using SiGe HBTs; J.R. Long
    Direct Conversion Architectures for SiGe Radios; S. Chakraborty and J. Laskar
    RF MEMS Techniques in Si/SiGe; J. Papapolymerou
    Wideband Antennas on Silicon; M.M. Tentzeris and R.L. Li
    Packaging Issues for SiGe Circuits; K. Lim, S. Pinel, and J. Laskar
    Industry Examples at State-of-the-Art: IBM; D.J. Friedman and M. Meghelli
    Industry Examples at State-of-the-Art: Hitachi; K. Washio
    Industry Examples at State-of-the-Art: ST; D. Belot
    APPENDICES
    Properties of Silicon and Germanium; J.D. Cressler
    The Generalized Moll-Ross Relations; J.D. Cressler
    Integral Charge-Control Relations; M. Schröter
    Sample SiGe HBT Compact Model Parameters; R.M. Malladi
    INDEX

    Biography

    Cressler, John D.

    "…a collection of 28 high-quality reviews rich in references, is a great success. The impact could go even further. I was very impressed on first reading, I was also very surprised by the contributors, since they are mostly eminent and very active in the field, though relatively young and representative of future trends. I was also excited by the up-to-date research content. Finally, this book will undoubtedly be an essential reference for researchers and an introduction for students just starting in the field."
    -Bao-Lian Su, Materials Today, Vol. 9, No. 1-2, Jan-Feb. 2006